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- Shockley initially attempted to build a working FET by trying to modulate the conductivity of a semiconductor, but was unsuccessful, mainly due to problems with the surface states, the dangling bond, and the germanium and copper compound materials.
en.wikipedia.org/wiki/Field-effect_transistor
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Apr 9, 2018 · In early January 1948, they filed a patent (US 2,524,035) to manufacture the first point-contact transistor in history, which did not include Shockley as the inventor. When Shockley learned of the success achieved by Bardeen and Brattain in his absence, he became furious, as it annoyed him that he was not involved in the discovery.
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Bell Labs' attorneys soon discovered Shockley's field effect principle had been anticipated and devices based on it patented in 1930 by Julius Lilienfeld, who filed his MESFET-like patent in Canada on October 22, 1925.
Nov 20, 2022 · The underlying principle of such a device would be something called the field effect—the ability of electric fields to modulate the electrical conductivity of semiconductor materials. The field effect was already well known in those days, thanks to diodes and related research on semiconductors.
- Glenn Zorpette
William Shockley gained fame and shared a Nobel Prize for his development of point-contact transistors, work that provided the basis for one of the sweeping technological revolutions of the twentieth century. His junction and field-effect transistors became workhorses of the electronics industry.
In 1945 Shockley designed a semiconductor amplifier based on the field effect. The underlying principle here is that an electric field applied through a semiconductor surface should alter the charge density within and thus change the semiconductor conductivity.
Aug 8, 2024 · The three men invented the point-contact transistor in 1947 and a more effective device, the junction transistor, in 1948. Shockley was deputy director of the Weapons Systems Evaluation Group of the Department of Defense in 1954–55. He joined Beckman Instruments, Inc., to establish the Shockley Semiconductor Laboratory in 1955.
Shockley initially attempted to build a working FET by trying to modulate the conductivity of a semiconductor, but was unsuccessful, mainly due to problems with the surface states, the dangling bond, and the germanium and copper compound materials.
