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Bantval Jayant Baliga (born () 28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).
Biography. B. Jayant Baliga (Life Fellow, IEEE) received the M.S. and Ph.D. degrees in electrical engineering from the Rensselaer Polytechnic Institute, Troy, NY, USA, in 1971 and 1974, respectively.
Sep 5, 2008 · Fundamentals of Power Semiconductor Devices. B. Baliga. Published 5 September 2008. Engineering, Physics. Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry.
Overview. Authors: B. Jayant Baliga. Provides comprehensive textbook for courses on physics of power semiconductor devices. Includes extensive analytical formulations for design and analysis of device structures. Uses numerical simulation examples in every section to elucidate the operating physics and validate the models.
Apr 22, 2014 · One person ready to experiment—in the literal sense—was B. Jayant Baliga, the recipient of this year’s IEEE Medal of Honor. At the time, he was developing semiconductor power devices for ...
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Professor B. Jayant Baliga: Dr. Baliga is an internationally renowned scientist, prolific author of 19 books and over 550 publications, and an established educator in the field of power semiconductor devices with 120 U.S. Patents to his name.